BSS670S2LH6327XT datasheet

Маркировка

BSS670S2LH6327XT
Производитель

Infineon Technologies
Описание

Infineon Technologies BSS670S2LH6327XT Configuration: Single Continuous Drain Current: 540 mA Drain-source Breakdown Voltage: 55 V Fall Time: 32 nS Gate Charge Qg: 2.26 nC Gate-source Breakdown Voltage: +/- 20 V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: PG-SOT-23 Part # Aliases: BSS670S2L BSS670S2LH6327XTSA1 H6327 Power Dissipation: 360 mW Resistance Drain-source Rds (on): 650 mOhms at 10 V Rise Time: 37 ns Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 21 ns RoHS: yes Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 650 mOhms at 10 V Typical Turn-Off Delay Time: 21 ns
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8 шт.
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